Dr. Yu Hongyu, PhD

Professor

Department of Electrical and Electronic Engineering

South University of Science and Technology

Shenzhen, Guangdong, China


Biography

Hongyu Yu, professor and deputy Chair of the Department of Electrical and Electronic Engineering, Southern University of Science and Technology from 2011 to 2018, currently serves as Executive Director of School Of Microelectronics Planning Office and Deputy Director of Shenzhen Institute Of Wide Gap Semiconductors. He has set up for the third of generation semiconductor research institute in Shenzhen and is currently in charge of the building of SUSTech-HKUST Joint School of Microelectronics. Established Shenzhen third-generation semiconductor key laboratory, Guangdong province GaN device engineering technology center, and served as director. He has been awarded the "1000 Talents Program for Young Scholars", Peacock project Shenzhen, Pengcheng scholar, Fellow of IET, special government allowance, deputy editor of Science Bulletin(China's top comprehensive academic journal) and editor of Journal of Semiconductor.
He received his BSc, MSc, and PhD from Tsinghua University, University of Toronto, and the National University of Singapore, respectively. He is a senior researcher in IMEC Belgium 2004 to 2008. From 2008 to 2011, he served as an assistant professor in the department of Electrical and Electronics Engineering, Nanyang Technological University, Singapore.
Professor yu Hongyu has achieved a series of innovative work in integrated circuit technology and devices, including CMOS, new ultra-high density memory, GaN device and system integration (GaN HEMT). He published more than 350 papers (>160 journal papers + >160 conference papers) with an SCI H-index of 37;Written 4 book chapters, edited 2 books: “Hafnium: Chemical Characteristics, Production and Application” and “Gallium Nitride Power Devices”. Applied/authorized 20 US/European patents and 10 Chinese patents. As a PI, he has undertaken ~20 research/talent projects, with a total funding ~ 50 million RMB. He has built a 1,200-square-metre clean room in Southern University of Science and Technology, forming a full 6-inch CMOS lab which hardware will reach the top level in southern China.

Research Interest

GaN power device and system integration
Multi-layer Ceramic Capacitor
Advanced CMOS process
New Ultra-high Density Memory

Scientific Activities

AWARDS

• Advisory Board Member of The Open Electrical & Electronic Engineering Journal (2018)
• Editorial Board Member of Integrated Circuit Industry Encyclopedia (2018)
• Outstanding Scientific Research Award in South University of Science and Technology (2016)
• Pengcheng scholar (2014)
• Peacock Project ,Shenzhen (2013)
• Shenzhen government special allowance (2012)
• Fellow of IET (2012)
• Senior Member of IEEE (2012)
• Editorial Board Member of Journal of Semiconductors (2011)
• “One Thousand Persons Plan” (2011)
• MRS-ICMAT Best Poster Award: Solar Cell (2011)
• The Recruitment Program of Global Experts (Young Scholar Program), Organization Department of the CCCPC (2011)
• Chen Zhenchuan Academic Exchange Award (2009)
• Nanyang Assistant Professorship, NTU (2008)
• Highlight paper in Symposium on VLSI Technology, (2007, Kyoto, Japan)
• IEEE Electron Device Society (EDS) Graduate Fellowship (2004, USA)

Publications

Published more than 350 papers (>160 journal papers + >180 conference papers) with a SCI H-index of 37;Edited 2 books and written 4 book chapters in area of CMOS/memory/Solar cell/GaN devices. Applied 23 US/European patents and 10 Chinese patents.
(A) Books:
1. H.Y. Yu, T.L. Duan “Gallium Nitride Power Devices,” Published by Pan Stanford Publishing, 2017
2. H.Y. Yu, “Hafnium: Chemical characteristics, production and applicaions”, Published by Nova Science Publishers, 2014
(B) Book Chapters:
1. H.Y. Yu, "Metal Gate Electrode and High-K Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide (LaOx-) Capping Layer for Low-Vth Application", book chapter in "Solid State Circuits Technologies", ISBN 978-953-307-045-2, Ed. Jacobus W. Swart, IN-TECH, Jan. 2010
2. J.S. Li, H.Y. Yu, “Enhancement of Si-based solar cell efficiency via nanostructure integration”, book chapter in “Energy Efficiency and Renewable Energy through Nanotechnology”, ISBN, 978-0-85729-637-5: .3-56, Ed. L. Zang, Springer, 2011
3. D.L. Kwong, Y. Sun, H.Y. Yu, N. Singh, P. Lo, “Ultra-high Density Non-volatile Flash Memory Devices Realized on CMOS Si Nanowires,” book chapter in “Nonvolatile Memories: Materials, Devices and Applications,” Ed. Tseung-Yuen Tseng, and Simon M. Sze, American Academic Press, 2011
4. H.Y. Yu, Z.R. Wang, “Nano-scale Resistive Random Access Memory: Materials, Devices and Circuits,” book chapter in “Applied nanotechnologies”, Edited by Kris Iniewski, CRS Press, 2013
(C) Patent Authorization:
1. H.Y. Yu, J.D. Chen, M.F. Li, D.L. Kwong, S. Biesemans, and J.A. Kittl “Low workfunction metal, use of this low workfunction metal as gate electrode for nMOS devices, a method for forming nMOS devices comprising such low workfunction metal and devices obtained thereof.” US 7,504,329 granted; EP 1722404-published; EP 1796151- published;
2. H.Y. Yu, M.F. Li, D.L. Kwong, and K.L. Bera, “A thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof” US 7,514,360, granted
3. Yu HongYu, Chang Shou-Zen, Kittl Jorge Adrian, Lauwers Anne, Veloso Anabela; “Semiconductor Device With Reduced Diffusion of Workfunction Modulating Element,” US 7,759,748, granted; EP 1 916 706 A2
4. Yu HongYu, S. Biesemans, “Method for forming a fully germanosilicided gate mosfet and devices obtained thereof,” EP 1744352-published; JP 2007 027725-published; US 2007 0023849-published
5. Pantisano Luigi, Schram Tom; De Gendt Stefan; Akheyar Amal; Pourtois Geoffrey; Yu HongYu; “Method for modulating the effective work function,” US 2007 0272967 – published
6. Yu HongYu, Lousberg Gregory;, “Semiconductor devices,” US 20070267762 – published
7. H. Tigelaar, S. Kubicek, H.Y. Yu, “Method of manufacturing a semiconductor device with multiple dielectric.,” US 2008-0096383 – published; EU: EP1914800 A1
8. Chang Shou-Zen, Kittl Jorge Adrian; Yu HongYu; Lauwers Anne; Veloso Anabela; “Semiconductor device comprising a doped metal comprising main electrode,” US 20080136030 A1 – published
9. Chang Shou-Zen, HongYu Yu, Anabela Veloso, Rita Vos, Stefan Kubicek, Serge Biesemans, Raghunath Singanamalla, Anne Lauwers, Bart Onsia, “Methods for manufacturing a CMOS device with dual dielectric layers,” US2008/0191286 A1 – published
10. Chang Shou-Zen; H.Y. Yu; “Method of manufacturing a semiconductor device with dual fully silicided gate,” US patent 2008-0134469 A1
11. S-Z. Chang, H.Y. Yu, A. Veloso, Rita Vos, Stefan Kubicek, Serge Biesemans, Raghunath Singanamalla, Anne Lauwers, Bart Onsia, “Methods for manufacturing a CMOS device with dual dielectric layers,” US2008-0191286, published, CN, EP, patent filed
12. Pantisano Luigi; Schram Tom, De Gendt Stefan, Akheyar Amal; Wang XinPeng; Li Mingfu; Yu HongYu; “Method for modulating the effective work function,” US 2009 0050982 A1 – published
13. Chang Shou-Zen; Hoffmann Thomas Y.; Pourtois Geoffrey; Yu HongYu, “Dual work function device with stressor layer and method for manufacturing the same” US 2009 0174003 A1; EU EP 2061076 A1
14. B. Govoreanu, H.Y. Yu, H-J. Cho, “Non-Volatile Memory Device with Improved Immunity to Erase Saturation and Method for Manufacturing Same,” US 2009-0134453 A1
15. B. Govoreanu, H.Y. Yu, H-J. Cho, “Interpoly dielectric for a non-volatile memory device with a metal or p-type controle gate,” EU EP 2063459 A1
16. Chang Shou-Zen; Yu HongYu, Hoffmann Thomas Y.; “Semiconductor device and method for fabricating the same” US 20090206417 A1; EU patent, EP 2093796 A1
17. H.Y. Yu, Shou-Zen Chang, Hoffmann Thomas Y., Absil Philippe, “Method of fabricating a dual workfunction semiconductor device made thereof” EU patent, EP 2112686 A3
18. Chang Shih-Hsun (Vincent); Singanamalla Raghunath; Yu HongYu; Kaushik Vidya S.; Schram Tom; Kubicek Stefan; Biesemans Serge; Van Elshocht Sven; De Gendt Stefan; Heyns Marc, “Semiconductor devices having dual metal gates and method for making the same,” US patent, filed
19. Hag-Ju Cho, Anabela Veloso, Hongyu Yu, Stefan Kubicek, Shou-Zen Chang, “Semiconductor device and method for fabricating the same”, US patent, filed; EU patent, EP 2083441 A1
20. H.Y. Yu, Shou-Zen Chang, Method of manufacturing a semiconductor device with dual fully silicided gate, EU patent: EP 1 928 021 A1
21. Chang Shou-Zen; Yu HongYu, “Method for fabricating a dual workfunction semiconductor device and the device made thereof” EU patent, 08075619.0 – 1235
22. Jinping Liu, Hongyu Yu, Kin Leong Pey, Alex See PH, Mei Sheng Zhou, Liang Choo Hsia, “Multi-stack Nanocrystals for NVM,” USA Application
23. Gang Zhang, P. Lo, J.S. Li, S.M. Wong, H.M. Wong, HongYu Yu, D.L. Kwong, “Application of inhomogeneous-diameters SiNWs to enhance solar cell ultimate efficiency” , USA Application
24. Yu HongYu, Zhang Shuxiang, Yang Qinghua, “一种集成不同厚度金属层以调节功函数的方法” , CN104779205B, 2018/06/26
25. Jiang Lingli, Li Tao, Wang Ning, Yu Hongyu, Chen Lang, “一种微波放大器件”, CN206834181U , 2018/01/02
26. Jiang Lingli, Li Tao, Wang Ning, Yu Hongyu, “一种高速电力开关器件”, CN206685393U , 2017/11/28
27. Yu HongYu, Zhang Shuxiang, Yang Qinghua, “一种后栅工艺中的栅极形成方法” , CN104779150B, 2017/10/20
28. Li Tao, Yu Hongyu, Jiang Lingli, “一种AC-DC适配器” , CN205544987U, 2016/08/31
29. Xia Kunpeng, Dong Bin, Yu Hongyu, Lin Jie, Cheng Qijia, Jiang Lingli, Liu Zongdai, “一种电源适配器” , CN204578387U, 2015/08/19
30. Zhou ZhiHui, Zhang Lei, Yu HongYu, Li Jian, He Kai, Chen Lang, “流延机刮刀装置”, CN206357519U,2017/07/28

(D) Papers:
1. H.Y. Yu*, X.D. Feng, D. Grozea, Z.H. Lu, R. Sodhi, A.M. Hor, H. Aziz. Surface electronic structure of plasma-treated indium tin oxides. Applied Physics Letters, 2001, 78(17): 2595-2597
2. H.Y. Yu*, M.F. Li, B.J. Cho, C.C. Yeo, M.S. Joo, D.L. Kwong, J.S. Pan, C.H. Ang, J.Z. Zheng, S. Ramanathan. Energy gap and band alignment for (HfO2)x(Al2O3)1-x on (100) Si. Applied Physics Letters, 2001, 81(2): 376-378
3. H.Y. Yu*, N. Wu, M.F. Li, C.X. Zhu, B.J. Cho, D.L. Kwong, C.H. Tung, J.S. Pan, J.W. Chai, W.D. Wang, D.Z. Chi, S. Ramanathan. Thermal stability of (HfO2)x(Al2O3)1-x on Si. Applied Physics Letters, 2002, 81(19): 3618-3620
4. H.Y. Yu*, Y.T. Hou, M.F. Li, D.L. Kwong. Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs. IEEE Electron Device Letters, 2002, 23(5):285-287
5. Y.T. Hou*, M.F. Li, H.Y. Yu, D.L. Kwong. Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks. IEEE Electron Device Letters, 2003, 24(2): 96-98
6. H.Y. Yu*, H.F. Lim, J.H. Chen, M.F. Li, C.X. Zhu, C.H. Tung, A. Du, W. Wang, D. Chi, D.L. Kwong. Physical and electrical characteristic of HfN gate electrode for advanced MOS devices. IEEE Electron Device Letters, 2003, 24(4): 230-232
7. M.S. Joo, B.J. Cho*, C.C. Yeo, N. Wu, H.Y. Yu, C.X. Zhu, M.F. Li, D.L. Kwong, N. Balasubramanian. Dependence of chemical composition ratio on electrical properties of HfO2-A2O3 gate dielectric. Japanese Journal of Applied Physics Part 2-Letters & Express Letters, 2003, 42(3A):220-222
8. H.Y. Yu*, J.F. Kang, C. Ren, J.D. Chen, Y.T. Hou, C. Shen, M.F. Li, D.S.H. Chan, K.L. Bera, C.H. Tung, D.L. Kwong. Robust high-quality HfN-HfO2 gate stack for advanced MOS device applications. IEEE Electron Device Letters, 2004, 25(2): 70-72
9. J.F. Kang*, H.Y. Yu, C. Ren, M.F. Li, DSH. Chan, H. Hu, H.F. Lim, W.D. Wang, D. Gui, D.L. Kwong. Thermal Stability of nitrogen incorporated in HfNxOy gate dielectrics by reactive sputtering. Applied Physics Letters, 2004, 84(9): 1588-1590
10. C. Ren, H.Y. Yu, J.F. Kang, Y.T. Hou, D.S.H. Chan*, M.F. Li, W.D. Wang, D.L. Kwong. Fermi-level pinning induced thermal instability in the effective work function of TaN in TaN/SiO2 gate stack. IEEE Electron Device Letters, 2004, 25(3): 123-125
11. H.Y. Yu, C. Ren, Y.C. Yeo, J.F. Kang, X.P. Wang, H.H.H. Ma, M.F. Li*, D.S.H. Chan, D.L. Kwong. Fermi level-pinning induced thermal instability of metal gate work functions. IEEE Electron Device Letters, 2004, 25(5): 337-339
12. S.Y. Zhu*, H.Y. Yu, S.J. Whang, J.H. Chen, C. Shen, C.X. Zhu, S.J. Lee, M.F. Li, D.S.H. Chan, W.J. Yoo. A. Du, C.H. Tung, J. Singh, A. Chin, D.L. Kwong, Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal gate electrode. IEEE Electron Device Letters, 2004, 25(5): 268-270
13. C. Ren*, H.Y. Yu, J.F. Kang, X.P. Wang, H.H.H. Ma, Y.C. Yeo, M.F. Li, D.S.H. Chan, D.L. Kwong. A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate. IEEE Electron Device Letters, 2004, 25(8): 580-582
14. C. Ren*, H.Y. Yu, X.P. Wang, H.H. Ma, D.S.H. Chan, M.F. Li, Y.C. Yeo, C.H. Tung, N. Balasubramanian, A.C.H. Huan, J.S. Pan, D.L. Kwong. Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications. IEEE Electron Device Letters, 2005, 26(2): 75-77
15. C. Shen, M.F. Li*, H.Y. Yu, X.P. Wang, Y.C. Yeo, D.S.H. Chan, D.L. Kwong. Physical model for frequency-dependent dynamic charge trapping in metaloxide-semiconductor field effect transistors with HfO2 gate dielectric.
Applied Physics Letters, 2005, 86(9), 093510
16. J.F. Kang*, H.Y. Yu, C. Ren, X.P. Wang, M.F. Li, D.S.H. Chan, Y.C. Yeo, N. Sa, H. Yang, X.Y. Liu, R.Q. Han, D.L. Kwong. Improved electrical and reliability characteristics of HfN-HfO2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process. IEEE Electron Device Letters, 2005, 26(4): 237-239
17. N. Sa*, J.F. Kang, H. Yang, X.Y. Liu, Y.D. He, R.Q. Han, C. Ren, H.Y. Yu, D.S.H. Chan, D.L. Kwong. Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps. IEEE Electron Device Letters, 2005, 26(9): 610-612
18. J.F. Kang*, H.Y. Yu, C. Ren, M.F. Li, D.S.H. Chan, X.Y. Liu, D.L. Kwong. Ultrathin HfO2(EOT <0.75nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process. Electrochemical and Solid-State Letters, 2005, 8(11): G311-313.
19. J.F. Kang*, H.Y. Yu, C. Ren, X.Y. Liu, R.Q. Han, B. Yu, D.L. Kwong. An improved pregate cleaning process for high-k gate dielectric fabrication. Electrochemical and Solid-State Letters, 2005, 8(11): G314-316
20. J.D. Chen, H.Y. Yu*, M.F. Li, D.L. Kwong, M. van Dal, J.A. Kittl, A. Lauwers, P. Absil, M. Jurczak, S. Biesemans. Yb-doped NiFUSI for the n-MOSFETs gate electrode application. IEEE Electron Device Letters, 2006, 27(3): 160-162
21. R. Singanamalla*, H.Y. Yu, G. Pourtois, I. Ferain, A. Kottantharayil, S. Kubicek, M. Jurczak, S. Biesemans, K. De Meyer. On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON gate stacks. IEEE Electron Device Letters, 2006, 27(5): 332-334
22. G. R. Lousberg*, H.Y. Yu, B. Froment, E. Augendre, A. De Keersgieter, A. Lauwers, M.F. Li, P. Absil, M. Jurczak, S. Biesemans. Schottky-Barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs. IEEE Electron Device Letters, 2007, 28(2): 123-125
23. H.Y. Yu*, A. Lauwers, C. Demeurisse, O. Richard, S. Mertens, E. Rosseel, P. Absil, S. Biesemans. Electrical properties of nMOSFETs using the NiSi:Yb FUSI electrode. IEEE Electron Device Letters, 2007, 28(2): 154-156
24. X.P. Wang*, H.Y. Yu, M.F. Li, C. X. Zhu, S. Biesemans, A. Chin, Y.Y. Sun, Y. P. Feng, A. Lim, Y.C. Yeo, W.Y. Loh, G.Q. Lo, D.L. Kwong. Wide V-fb and V-th tunability for metal-gated MOS devices with HfLaO gate dielectrics. IEEE Electron Device Letters, 2007, 28(4): 258-260
25. R. Singanamalla*, H.Y. Yu, T. Janssens, S. Kubicek, K. De Meyer. The study of effective work function modulation by as ion implantation in TiN/TaN/HfO2 stacks. Japanese Journal of Applied Physics Part 2-Letters&Express Letters, 2007, 46(12-16): L320-322
26. L.A. Ragnarsson*, V.S. Chang, H.Y. Yu, H.J. Cho, T. Conard, K.M. Yin, A. Delabie, J. Swerts, T. Schram, S. De Gendt, S. Biesemans. Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates. IEEE Electron Device Letters, 2007, 28(6): 486-488
27. S. Z. Chang, H.Y. Yu*, A. Veloso, A. Lauwers, D. Annelies, J.L. Everaet, C. Kerner, P. Absil, T. Hoffmann, S. Biesemans. The application of an ultrathin ALD HfSiON cap layer on SiON dielectrics for Ni-FUSICMOS technology targeting at low-power applications. IEEE Electron Device Letters, 2007, 28(7): 634-636
28. H.Y. Yu*, R. Singanamalla, L Å Ragnarsson, S.Z. Chang, V.S. Chang, H.J. Cho, R. Mitsuhashi, C. Adelmann, S. Van Elshocht, P. Lehnen, K.M. Yin, S. Degendt, P. Absil, S. Biesemans. Demonstration of metal-gated low V-t n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value. IEEE Electron Device Letters, 2007, 28(7): 656-658
29. H.Y. Yu*, S.Z. Chang, A. Veloso, A. Lauwers, C. Adelmann, B. Onsia, P. Lehnen, T. Kauerauf, S. Brus, K.M.Yin, P. Absil, S. Biesemans. Demonstration of low V-t Ni-FUSIN-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer. IEEE Electron Device Letters, 2007, 28(11): 957-959
30. A. Veloso*, H.Y. Yu, C. Z. Chang, C. Adelmann, B. Onsia, S. Brus, M. Demand, A. Lauwers, B. J. O’Sullivan, R. Singanamalla, P. Lehnen, S. Van Elshocht, M. Jurczak, P. Absil, S. Biesemans. Achieving low-V-T Ni-FUSICMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics. IEEE Electron Device Letters, 2007, 28(11): 980-983R.
31. Singanamalla*, H.Y. Yu, B. Van Daele, S. Kubicek, K. De Meyer. Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2). IEEE Electron Device Letters, 2007, 28(12): 1089-1091
32. A. Lauwers*, A. Veloso, S.Z. Chang, H.Y. Yu, T. Hoffmann, C. Kerner, M. Demand, A Rothschild, M. Niwa, I. Satoru, R. Mitsuhashi, M. Ameen, G. Whittemore, M. A. Pawlak, C. Vrancken, C. Demeurisse, S. Mertens, W. Vandervorst, P. Absil, S. Biesemans, J.A. Kittl. Cost-effective low VtNi-FUSICMOS on SiON by means of Al implant (pMOS) and Yb+P coimplant (nMOS). IEEE Electron Device Letters, 2008, 29(1): 34-37
33. X.P. Wang*, M.F. Li, H. Y. Yu, J. J. Yang, C.X. Zhu, A.Y. Du, W.Y. Loh, S. Biesemans, A. Chin, G.Q. Lo, D.L. Kwong. Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric. IEEE Electron Device Letters, 2008, 29(1): 50-53
34. S. Z. Chang*, H. Y. Yu, A. Delabie, X. P. Wang, C. Adelmann, A. Akheyar, S. Van Elshocht, L. Nyns, J. Swerts, A. Marc, C. Kerner, P. Absil, T. Y. Hoffmann, S. Biesemans. Electrical properties of Low-V-T metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-kappa dielectrics and Si channel. IEEE Electron Device Letters, 2008, 29(5): 430-433
35. H.J. Cho*, H.Y. Yu, V.S. Chang, A. Akheyar, S. Jakschik, T. Conard, T. Hantschel, A. Delabie, C. Adelmann, S. Van Elshocht, L.Å. Ragnarsson, T. Schram, P. Absil, S. Biesemans. The impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics. IEEE Electron Device Letters, 2008, 29(7): 743-745
36. B.J. O’Sullivan*, R. Mitsuhashi, S. Ito, K. Oikawa, S. Kubicek, V. Paraschiv, C. Adelmann, A. Veloso, H.Y. Yu, T. Schram, S. Biesemans, T. Nakabayashi, A. Ikeda, M. Niwa. Work-Function Engineering for 32-nm-Node pMOS Devices: High-Performance TaCNO-Gated Films. IEEE Electron Device Letters, 2008, 29(11): 1203-1205
37. H.Y. Yu*, S.Z. Chang, M. Aoulaiche, C. Adelmann, X.P. Wang, B. Kaczer, P. Absil, A. Lauwers, S. Biesemans. Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge. Applied Physics Letters, 2008, 93(26): 263502
38. Z.X. Chen, H.Y. Yu*, N. Singh, N.S. Shen, R.D. Sayanthan, G.Q. Lo, D.L. Kwong. Demonstration of Tunneling FETs based on Highly Scalable Vertical Silicon Nanowires. IEEE Electron Device Letters, 2009, 30(7): 754-756
39. J.S. Li, H.Y. Yu*, S.M. Wong, G. Zhang, X.W. Sun, G.Q. Lo, D.L. Kwong. Si nanopillar array optimization on Si thin films for solar energy harvesting. Applied Physics Letters, 2009, 95(3): 033102
2009/7, also selected Virtual Journal of Nanoscale Science & Technology, 2009/8 (高引)
40. M.C. Chen, H.Y. Yu*, N. Singh, Y. Sun, N.S. Shen, X.H. Yuan, G.Q. Lo, D.L. Kwong. Vertical-Si-Nanowire SONOS Memory for Ultrahigh-Density Application. IEEE Electron Device Letters, 2009, 30(8): 879-881 2009/8
41. J.S. Li, H.Y. Yu*, S.M. Wong, G. Zhang, P.G.Q. Lo, D.L. Kwong. Design guidelines of periodic Si nanowire arrays for solar cell application. Applied Physics Letters, 2009, 95(24): 243113
42. F. Wang, H.Y. Yu*, J.S. Li, X.W. Sun, X.C. Wang, H. Zheng. Optical absorption enhancement in nanopore textured-silicon thin film for photovoltaic application. Optics Letters, 2010, 35(1): 40-42
43. L. Wu, H.Y. Yu*, K.L. Pey, D.Y. Lee, K.Y. Hsu, K.T. Huang, H.J. Tao, Y.J. Mii, J.S. Pan, M. Tuominen, and Eva Tois. Electrical and Physical Properties of Er-Doped HfO2 High-k Dielectrics Prepared by Atomic Layer Deposition. Electrochemical and Solid-State Letters, 2010, 13(2): G21-23
44. X.C. Wang*, H.Y. Zheng, C.W. Tan, F. Wang, H.Y. Yu, K.L. Pey. Fabrication of silicon nanobump arrays by near-field enhanced laser irradiation. Applied Physics Letters, 2010, 96(8): 084101
45. L. Wu, H.Y. Yu*, X. Li, K.L. Pey, J.S. Pan, J.W. Chai, Y.S. Chiu, C.T. Lin, J.H. Xu, H.J. Wann, X.F. Yu, D.Y. Lee, K.Y. Hsu, H.J. Tao. Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric. Applied Physics Letters, 2010, 96(11): 113510
46. S.M. Wong, H.Y. Yu*, J.S. Li, G. Zhang, P.G.Q. Lo, D.L. Kwong. Design High-Efficiency Si Nanopillar-Array-Textured Thin-Film Solar Cell. IEEE Electron Device Letters, 2010, 31(4): 335-337
47. Z. Fang, H.Y. Yu*, W.J. Liu, Z.R. Wang, X.A. Tran, B. Gao, J.F. Kang. Temperature Instability of Resistive Switching on HfOx-Based RRAM Devices. IEEE Electron Device Letters, 2010, 31(5): 476-478
48. Y. Sun, H.Y. Yu*, N. Singh, N.S. Shen, G.Q. Lo, D.L. Kwong. Multibit Programmable Flash Memory Realized on Vertical Si Nanowire Channel. IEEE Electron Device Letters, 2010, 31(5): 390-392
49. G.F. Jiao*, Z.X. Chen, H.Y. Yu, X. Y. Huang, D. M. Huang, N. Singh, G. Q. Lo, D.L. Kwong, M.F. Li. Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors. IEEE Electron Device Letters, 2010, 31(5): 396-398
50. X.Y. Huang*, G.F. Jiao, W. Cao, D. Huang, H.Y. Yu, Z.X. Chen, N. Singh, G.Q. Lo, D.L. Kwong, M.F. Li. Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors. IEEE Electron Device Letters, 2010, 31(8): 779-781
51. X.C. Li*, J.S. Li, T. Chen, B.K. Tay, J.X. Wang, H.Y. Yu. Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications. Nanoscale Research Letters, 2010, 5(11): 1721-1726 2010/11
52. J.S. Li, H.Y. Yu*, Y.L. Li, F. Wang, M.F. Yang, S.M. Wong. Low aspect-ratio hemispherical nanopit surface texturing for enhancing light absorption in crystalline Si thin film-based solar cells. Applied Physics Letters, 2011, 98(2): 021905
53. S.M. Wong, H.Y. Yu*, J.S. Li, Y.L. Li, N. Singh, P.G.Q. Lo, D.L. Kwong. Si Nanopillar Array Surface Textured Thin Film Solar Cell with Radial p-n Junction. IEEE Electron Device Letters, 2011, 32(2): 176-178
54. W.J. Liu, H.Y. Yu*, S.H. Xu, Q. Zhang, X. Zou, J.L. Wang, K.L. Pey, J. Wei, H.L. Zhu, M.F. Li. Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy. IEEE Electron Device Letters, 2011, 32(2): 128-130
55. X.A. Tran, H.Y. Yu*, Y.C. Yeo, L. Wu, W.J. Liu, Z.R. Wang, Z. Fang, K.L. Pey, X.W. Sun, A.Y. Du, B.Y. Nguyen, M.F. Li. A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible with Si-Diode Selector for Crossbar Integration. IEEE Electron Device Letters, 2011, 32(3): 396-398
56. B. Gao*, H.W. Zhang, B. Chen, L.F. Liu, X.Y. Liu, R.Q. Han, J.F. Kang, Z. Fang, H.Y. Yu, B. Yu, D.L. Kwong, Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory, IEEE Electron Device Letters, 2011, 32(3): 276-278
57. Y.H. Zhu, H.Y. Yu, W.J. Fan*. Band structures and optical gain of strained GaAsxP1-x-yNy/GaP quantum wells. Applied Physics Letters, 2011, 98(12): 121112
58. W. Cao*, C. Shen, S.Q. Cheng, D.M. Huang, H.Y. Yu, N. Singh, G. Q. Lo, D. L. Kwong, M.F. Li. Gate Tunneling in Nanowire MOSFETs. IEEE Electron Device Letters, 2011, 32(4): 461-463
59. Z. Fang, H.Y. Yu*, X. Li, N. Singh, G.Q. Lo, D.L. Kwong. HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming- Free RRAM Devices With Excellent Uniformity. IEEE Electron Device Letters, 2011, 32(4): 566-568
60. Q.G. Du, C.H. Kam, H.V. Demir, H.Y. Yu, X.W. Sun*. Broadband absorption enhancement in randomly positioned silicon nanowire arrays for solar cell applications. Optics Letters, 2011, 36(10): 1884-1886
61. Q.G. Du, C.H. Kam, H.V. Demir, H.Y. Yu, X.W. Sun*. Enhanced optical absorption in nanopatterned silicon thin films with a nano-cone-hole structure for photovoltaic applications. Optics Letters, 2011, 36(9): 1713-1715
62. K. Zheng*, X.W. Sun, J.L. Zhao, Y. Wang, H.Y. Yu, H.V. Demir, K.L. Teo. An Indium-Free Transparent Resistive Switching Random Access Memory. IEEE Electron Device Letters, 2011, 32(6): 797-799
63. T.T. Le*, H.Y. Yu, Y.Sun, N. Singh, X. Zhou, N. Shen, G.Q. Lo, D.L. Kwong. High-Performance Poly-Si Vertical Nanowire Thin-Film Transistor and the Inverter Demonstration. IEEE Electron Device Letters, 2011, 32(6): 770-772
64. Y. Sun, H.Y. Yu*, N. Singh, K.C. Leong, G.Q. Lo, D.L. Kwong. Junctionless Vertical-Si-Nanowire-Channel-Based SONOS Memory With 2-Bit Storage per Cell. IEEE Electron Device Letters, 2011, 32(6): 725-727
65. T.L. Duan, H.Y. Yu*, L. Wu, Z.R. Wang, Y.L. Foo, J.S. Pan. Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy. Applied Physics Letters,2011, 99(1): 012902
66. L. Wu, H.Y. Yu*. Device Performance and Reliability Improvement for MOSFETs With HfO2 Gate Dielectrics Fabricated Using Multideposition Room-Temperature Multiannealing. IEEE Electron Device Letters, 2011, 32(9): 1173-1175
67. X.A. Tran, H.Y. Yu*, B. Gao, J.F. Kang, X.W. Sun, Y.C. Yeo, B.Y. Nguyen, M.F. Li. Ni Electrode Unipolar Resistive RAM Performance Enhancement by AlOy Incorporation Into HfOx Switching Dielectrics. IEEE Electron Device Letters, 2011, 32(9): 1290-1292
68. X. Wu, Z. Fang, K. Li, M. Bosman, N. Raghavan, X. Li, H.Y. Yu, N. Singh, G.Q. Lo, X.X. Zhang, K.L. Pey*. Chemical insight into origin of forming-free resistive random-access memory devices. Applied Physics Letters, 2011, 99(13): 133504
69. W.J. Liu*, H.Y. Yu, J. Wei, M.F. Li. Impact of Process Induced Defects on the Contact Characteristics of Ti/Graphene Devices. Electrochemical and Solid State Letters, 2011, 14(12): K67-69
70. W.J. Liu, X.W. Sun, Z. Fang, Z.R. Wang, X.A. Tran, F. Wang, L. Wu, G.I. Ng, J.F. Zhang, J. Wei, H.L .Zhu, H.Y. Yu*. Positive Bias-Induced V-th Instability in Graphene Field Effect Transistors. IEEE Electron Device Letters, 2012, 33(3): 339-341
71. X.A. Tran, W.G. Zhu, B. Gao, J.F. Kang, W.J. Liu, Z. Fang, Z.R. Wang, Y.C. Yeo, B.Y. Nguyen, M.F. Li, H.Y. Yu*. A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode. IEEE Electron Device Letters, 2012, 33(4): 585-587
72. X.A. Tran, W. Zhu, W.J. Liu, Y.C. Yeo, B.Y. Nguyen, H.Y. Yu*. A Self-Rectifying AlOy Bipolar RRAM With Sub-50-mu A Set/Reset Current for Cross-Bar Architecture. IEEE Electron Device Letters, 2012, 33(10): 1402-1404
73. B. Chen*, J.F. Kang, B. Gao, Y.X. Deng, L.F. Liu, X.Y. Liu, Z. Fang, H.Y. Yu, X.P. Wang, G.Q. Lo, D.L. Kwong. Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect. IEEE Electron Device Letters, 2013, 34(10): 1292-1294
74. W.J. Liu*, X.A. Tran, X.B. Liu, J. Wei, H.Y. Yu*, X.W. Sun. Characteristics of a Single-Layer Graphene Field Effect Transistor with UV/ozone Treatment. ECS Solid State Letters, 2013, 2(1): M1-4
75. W.J. Liu*, X.A. Tran, H.Y. Yu*, X.W. Sun. A Self-Rectifying Unipolar HfOx Based RRAM Using Doped Germanium Bottom Electrode. Ecs Solid State Letters, 2013, 2(5): Q35-38
76. W.J. Liu, X.A. Tran, Z. Fang, H.D. Xiong*, H.Y. Yu*. A Self-Compliant One-Diode-One-Resistor Bipolar Resistive Random Access Memory for Low Power Application. IEEE Electron Device Letters, 2014, 35(2): 196-198
77. L. Hong, X.C. Wang, H.Y. Zheng, L.N. He, H. Wang, H.Y. Yu*. Rusli, High efficiency silicon nanohole/organic heterojunction hybrid solar cell. Applied Physics Letters, 2014, 104(5): 053104 Hong, L (Hong, Lei)[ 1,2 ] ; Wang,
78. G.X. Wan, T.L. Duan, S.X. Zhang, L.L. Jiang, B. Tang, J. Yan, C. Zhao, H.L. Zhu, H.Y. Yu*. Overshoot Stress on Ultra-Thin HfO2 High-kappa Layer and Its Impact on Lifetime Extraction. IEEE Electron Device Letters, 2015, 36(12): 1267-1270
79. H.Y. Yu*, Y.T. Hou, M.F. Li, D.L. Kwong. Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs. IEEE Transaction on Electron Devices, 2002, 49(7): 1158-1164
80. H.Y. Yu*, M.F. Li, D.L. Kwong. Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications. IEEE Transaction on Electron Devices, 2004, 51(4): 609-615
81. H.Y. Yu*, M.F. Li, D.L. Kwong. ALD (HfO2)x(Al2O3)1-x high-k gate dielectrics for advanced MOS devices application. Thin Solid Films, 2004, 462: 110-113
82. D. Gui*, J.F. Kang, H.Y. Yu, H.F. Lim. SIMS study on N diffusion in hafnium oxynitride. Applied Surface Science, 2004, 231: 590-593
83. M.F. Li*, G. Chen, C. Shen, X.P. Wang, H.Y. Yu, Y.C. Yeo, D.L. Kwong. Dynamic bias-temperature instability in ultrathin SiO2 and HfO2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2004, 43(11B): 7807-7814
84. S.Y. Zhu, H.Y. Yu, J.D. Chen, S.J. Whang, J.H. Chen, C. Shen, C.X. Zhu, S.J. Lee, M.F. Li*, D.S.H. Chan, W.J. Yoo, A. Du, C.H. Tung, J. Singh, A. Chin, D.L. Kwong. Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode. Solid-State Electronics, 2004, 48(10-11): 1987-1992
85. H.Y. Yu, C. Ren, Y.C. Yeo, J.F. Kang, X.P. Wang, H.H.H. Ma, M.F. Li, D.S.H. Chan, A.L. Kwong. Fermi pinning-induced thermal instability of metal-gate work functions. IEEE Electron Device Lettters, 2004, 25(5): 337-339
86. G. Du*, X.Y. Liu, Z.L. Xia, J.F. Kang, Y. Wang, R.Q. Han, H.Y. Yu, D.L. Kwong. Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation. IEEE Transaction on Electron Devices, 2005, 52(10): 2258-2264
87. H.Y. Yu*, R. Singanamalla, E. Simoen, X.P. Shi, J.A. Kittl, A. Lauwers, P. Absil, M. Jurczak, S. Biesemans. Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics. IEEE Transaction on Electron Devices, 2006, 53(6): 1398-1404
88. P. Srinivasan*, E. Simoen, R. Singanamalla, H.Y. Yu, C. Claeys, D. Misra. Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-kappa dielectrics. Solid-State Electronics, 2006, 50(6): 992-998 2006/6
89. A. Veloso*, T. Hoffmann, A. Lauwers, H.Y. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil. Advanced CMOS device technologies for 45 nm node and below. Science and Technology of Advanced Materials, 2007, 8(3): 214-218
90. R. Singanamalla*, H.Y. Yu, B.J.O. Sullivan, J. Petry, A. Mercha, V. Paraschiv, H. Volders, S. Kubicek, K. de Meyer, S. Biesemans. Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layer. Microelectronic Engineering, 2007, 84(9-10): 1865-1868J.A. Kittl*, A. Lauwers, M.A. Pawlak, A. Veloso, H.Y. Yu, S.Z. Chang, T. Hoffmann, G. Pourtois, C. Demeurisse, C. Vrancken, P.P. Absil, S. Biesemans. Modulation of the effective work function of fully-silicided (FUSI) gate stacks. Microelectronic Engineering, 2007, 84(9-10): 1857-1860
91. V.S. Chang*, L.Å. Ragnarsson, H.Y. Yu, M. Aoulaiche, T. Conard, K.M. Yin, T. Schram, J.W. Maes, S. D. Gendt, S. Biesemans. Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications. IEEE Transaction on Electron Devices, 2007, 54(10): 2738-2749
92. J.F. Kang*, H.Y. Yu, C. Ren, N. Sa, H. Yang, M-F. Li, D.S.H. Chan, X.Y. Liu, R.Q. Han, D.L. Kwong. Scalability and reliability characteristics of CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications. Journal of The Electrochemical Society, 2007, 154 (11): H927-932
93. X.P. Wang*, A. Lim, H.Y. Yu, M.F. Li, C. Ren, W.Y. Loh, C.X. Zhu, A. Chin, A.D. Trigg, Y.C. Yeo, S. Biesemans, G.Q. Lo, D.L. Kwong. Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices. IEEE Transaction on Electron Devices, 2007, 54(11): 2871-2877
94. J.J. Yang*, X.P. Wang, C.X. Zhu, M.F. Li, H.Y. Yu, W.Y. Loh, D.L. Kwong. Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics. IEEE Transaction on Electron Devices, 2008, 55(8): 2238-2245
95. A. Veloso*, H.Y. Yu, A. Lauwers, S.Z. Chang, C. Adelmann, B. Onsia, M. Demand, S. Brus, C. Vrancken, R. Singanamalla, P. Lehnen, J. Kittl, T. Kauerauf, R. Vos, B.J. O'Sullivan, S. Van Elshocht, R. Mitsuhashi, G. Whittemore, K.M. Yin, M. Niwa, T. Hoffmann, P. Absil, M. Jurczak, S. Biesemans. Achieving low-V-T Ni-FUSICMOS via lanthanide incorporation in the gate stack. Solid-State Electronics, 2008, 52(9): 1303-1311
96. B. Ling, X.W. Sun*, J.L. Zhao, S.T. Tan, Z.L. Dong, Y. Yang, H.Y. Yu, K.C. Qi. Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode. Physica E: Low-dimensional Systems and Nanostructures, 2009, 41(4): 635-639
97. C.W. Cheng, B. Yan, S.M. Wong, X.L. Li, W.W. Zhou, T. Yu, Z.X. Shen, H.Y. Yu, H.J. Fan*. Fabrication and SERS Performance of Silver-Nanoparticle-Decorated Si/ZnO Nanotrees in Ordered Arrays. ACS Applied Materials & Interfaces, 2010, 2(7): 1824-1828
98. Y. Wang, S.W. Liu, X.W. Sun*, J.L. Zhao, G.K. L. Goh, Q.V. Vu, H.Y. Yu. Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors. Journal of Sol-Gel Science and Technology, 2010, 55(3): 322-327
99. J.S. Li, H.Y. Yu*, S.M. Wong, G. Zhang, G.Q. Lo, D.L. Kwong. Si nanocone array optimization on crystalline Si thin films for solar energy harvesting. Journal of Physics D: Applied Physics, 2010, 43(25): 255101
100. F. Wang, H.Y. Yu*, X.C. Wang, J.S. Li, X.W. Sun, M.F. Yang, S.M. Wong, H.Y. Zheng. Mask less fabrication of large scale Si nanohole array via laser annealed metal nanoparticles catalytic etching for photovoltaic application. Journal of Applied Physics, 2010, 108(2): 024301
101. X.C. Wang*, H.Y. Zheng, C.W. Tan, F. Wang, H.Y. Yu, K.L. Pey. Femtosecond laser induced surface nanostructuring and simultaneous crystallization of amorphous thin silicon film. Optics Express, 2010, 18(18): 19379-19385
102. M.F. Yang*, H.Y. Yu*, X.W. Sun*, J.S. Li, X.C. Li, L. Ke, J.H. Hu, F. Wang, Z.H. Jiao. Periodic silicon nanocone arrays with controllable dimensions prepared by two-step etching using nanosphere lithography and NH4OH/H2O2 solution. Solid State Communications, 2011, 151(2): 127-129
103. Y. Wang*, X.W. Sun, G.K.L. Goh, H.V. Demir, H.Y. Yu. Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors. IEEE Transaction on Electron Devices, 2011, 58(2): 480-485
104. M. Shakerzadeh, N. Xu, M. Bosman, B.K. Tay, X. Wang, E.H.T. Teo, H. Zheng, H.Y. Yu. Field emission enhancement and microstructural changes of carbon films by single pulse laser irradiation. Carbon, 2011, 49(3), 1018-1024
105. F. Wang, H.Y. Yu*, J.S. Li, S.M. Wong, X.W. Sun, X.C. Wang, H.Y. Zheng. Design guideline of high efficiency crystalline Si thin film solar cell with nanohole array textured surface. Journal of Applied Physics, 2011, 109(8): 084306
106. Y. Sun, H.Y. Yu*, N. Singh, E. Gnani, G. Baccarani, K. C. Leong, G.Q. Lo, D. L. Kwong. Vertical-Si-Nanowire-Based Nonvolatile Memory Devices With Improved Performance and Reduced Process Complexity. IEEE Transaction on Electron Devices, 2011, 58(5): 1329-1335
107. L. Wu, H.Y. Yu*, K.S. Yew, J.S. Pan, W.J. Liu, T.L. Duan.Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High-kappa and Integration With a TiN Metal Gate in a Gate-Last Process. IEEE Transaction on Electron Devices, 2011, 58(7): 2177-2181
108. W. Cao*, C.J. Yao, G.F. Jiao, D.M. Huang, H.Y. Yu, M.F. Li. Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure. IEEE Transaction on Electron Devices, 2011, 58(7): 2122-2126
109. S.M. Wong, H.Y. Yu*, Y.L. Li, J.S. Li, X.W. Sun, N. Singh, P.G.Q. Lo, D.L. Kwong. Boosting Short-Circuit Current With Rationally Designed Periodic Si Nanopillar Surface Texturing for Solar Cells. IEEE Transaction on Electron Devices, 2011, 58(9): 3224-3229
110. M.F. Yang, X.W. Sun*, H.Y. Yu, J.S. Li, J.H. Hu. Low temperature polycrystalline silicon film formation by metal induced crystallization with nickel salt derived by ultrasonic spray pyrolysis. Crystal Research and Technology, 2011, 46(9): 935-938
111. Y.L. Li, H.Y. Yu*, J.S. Li, S.M. Wong, X.W. Sun, X.L. Li, C.W. Cheng, H.J. Fan*, J. Wang, N. Singh, P. Lo, D.L. Kwong. Novel Silicon Nanohemisphere-Array Solar Cells with Enhanced Performance. Small, 2011, 7(22): 3138-3142 (cover image of Small)
112. M.F. Li*, X.P. Wang, C. Shen, J.J. Yang, J.D. Chen, H.Y. Yu, C.X. Zhu, D.M. Huang. Some issues in advanced CMOS gate stack performance and reliability. Microelectronic Engineering, 2011, 88(12): 3377-3384 2011/12
113. J.S. Li, H.Y. Yu*, Y.L. Li. Aligned Si nanowire-based solar cells. Nanoscale, 2011, 3(12): 4888-4900 (Top ten most-read articles in December)
114. Y.S. Chen*, J.F. Kang*, B. Chen, B. Gao, L.F. Liu*, X.Y. Liu, Y.Y. Wang, L. Wu, H.Y. Yu, J.Y. Wang, Q. Chen, E.G. Wang. Microscopic mechanism for unipolar resistive switching behavior of nickel oxides. Journal of Physics D-Applied Physics, 2012, 45(6): 065303
115. L. Hong, X.C. Wang, Rusli, H. Wang, H.Y. Zheng, H.Y. Yu*. Crystallization and surface texturing of amorphous-Si induced by UV laser for photovoltaic application. Journal of Applied Physics, 2012, 111(4): 043106
116. Z. Fang, H.Y. Yu*, J.A. Chroboczek, G. Ghibaudo, J. Buckley, B. de Salvo, X. Li, D.L. Kwong. Low-Frequency Noise in Oxide-Based (TiN/HfOx/Pt) Resistive Random Access Memory Cells. IEEE Transaction on Electron Devices, 2012, 59(3): 850-853
117. Z.R. Wang, H.Y. Yu*, X.A. Tran, Z. Fang, J.H. Wang, H.B. Su. Transport properties of HfO2-x based resistive-switching memories. Physical Review B, 2012, 85(19): 195322
118. Z.R. Wang, A.Y. Du, L. Wu, Z. Fang, X.A. Tran, W.J. Liu, W.G. Zhu, H.Y. Yu*. Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based RRAM With Ge Doping. IEEE Transactions on Electron Devices, 59(4): 1203-1208
119. Z.R. Wang, V. Tjoa, L. Wu, W.J. Liu, Z. Fang, X.A. Tran, J. Wei, W.G. Zhu, H.Y. Yu*. Mechanism of Different Switching Directions in Graphene Oxide Based RRAM. Journal of the Electrochemical Society, 2012, 159(6): K177-182
120. J.S. Li*, H.Y. Yu*, Y.L. Li. Solar energy harnessing in hexagonally arranged Si nanowire arrays and effects of array symmetry on optical characteristics. Nanotechnology, 2012, 23(19): 194010
121. W.J. Liu, X.W. Sun, X.A. Tran, Z. Fang, Z. Wang, F. Wang, L. Wu, J.F. Zhang, J. Wei, H.L. Zhu, H.Y. Yu*. Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection. IEEE Transactions on Device and Materials Reliability, 2012. 12(2): 478-481
122. Q.G. Du, G. Alagappan, H.T. Dai, H.V. Demir, H.Y. Yu, X.W. Sun*, C.H. Kam. UV-blocking ZnO nanostructure anti-reflective coatings. Optics Communications, 2012, 285(13-14): 3238-3241
123. L. Hong, Rusli, X.C. Wang, H.Y. Zheng, L.N. He, X.Y. Xu, H. Wang, H.Y. Yu. Design principles for plasmonic thin film GaAs solar cells with high absorption enhancement. Journal of Applied Physics, 2012, 112(5): 054326
124. L. Hong*, Rusli, H.Y. Yu. Surface Nanostructure Optimization for GaAs Solar Cell Application. Japanese Journal of Applied Physics, 2012, 51(10): 1143
125. Chen, YS ; Kang, JF, Chen, B , Gao, B, Liu, LF, Liu, XY , Wang, YY, Wu, L, Yu, HY , Wang, JY. Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides. Journal of Physics D-Applied Physics. 2012, 45(6): 065303
126. X.A. Tran*, W. Zhu, W.J. Liu, Y.C. Yeo, B.Y. Nguyen, H.Y. Yu*. Self-Selection Unipolar HfOx-Based RRAM. IEEE Transactions on Electron Devices, 2013, 60(1): 391-395
127. Z. Fang*, H.Y. Yu, W. J. Fan, G. Ghibaudo, J. Buckley, B. DeSalvo, X. Li, X.P. Wang, G.Q. Lo, D.L. Kwong. Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis. IEEE Transactions on Electron Devices, 2013, 60(3): 1272-1275
128. J.S. Li*, Y.L. Li, D.Y. He, H.Y. Yu, X.B. Yan. Design and mechanism of cost-effective and highly efficient ultrathin (< 0.5 mu m) GaAs solar cells employing nano/micro-hemisphere surface texturing. AIP Advances, 3(3): 032145
129. S.M. Yu*, B. Gao, Z. Fang, H.Y. Yu, J.F. Kang, H.S.P. Wong. A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation. Advanced Materials, 2013, 25(12): 1774-1779
130. B. Gao*, B. Chen, F.F. Zhang, L.F. Liu, X.Y. Liu, J.F. Kang, H.Y. Yu, B. Yu. A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory. IEEE Transactions on Electron Devices, 2013, 60(4): 1379-1383
131. X. Tong*, W.J. Wu, Z. Liu, X.A. Tran, H.Y. Yu, Y.C. Yeo, Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory, Japanese Journal of Applied Physics, 2013, 52(4): Unsp 04cd03
132. L. Hong*, X.C. Wang, H.Y. Zheng, L. He, H. Wang, H.Y. Yu, Rusli, Femtosecond laser induced nanocone structure and simultaneous crystallization of 1.6 mu m amorphous silicon thin film for photovoltaic application, Journal of Physics D-Applied Physics, 2013, 46(19): 195109
133. W.J. Liu*, X.W. Sun, X.A. Tran, Z. Fang, Z.R. Wang, L. Wu, J.F. Zhang, J. Wei, H.L. Zhu, H.Y. Yu*, Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors, IEEE Transactions on Electron Devices, 2013, 60(8): 2682-2686
134. L. Hong, Rusli*, X.C. Wang, H.Y. Zheng, H. Wang, H.Y. Yu, Design guidelines for slanting silicon nanowire arrays for solar cell application, Journal of Applied Physics, 2013, 114(8): 084303
135. L. Hong*, Rusli, X.C. Wang, H.Y. Zheng, H. Wang, H.Y. Yu, Design guideline of Si nanohole/PEDOT:PSS hybrid structure for solar cell application, Nanotechnology, 2013, 24(35): 355301
136. S.M. Yu, B. Gao, Z. Fang, H.Y. Yu, J.F. Kang, H.S.P. Wong*, Stochastic learning in oxide binary synaptic device for neuromorphic computing. Frontiers in Neuroscience, 2013, 7: 186
137. Z.R. Wang, H.Y. Yu*, H.B. Su. The transport properties of oxygen vacancy-related polaron-like bound state in HfOx. Scientific Reports, 2013, 3: Unsp 3246
138. L. Hong, Rusli, X.C. Wang*, H.Y. Zheng, H. Wang, H.Y. Yu, Femtosecond laser fabrication of large-area periodic surface ripple structure on Si substrate, Applied Surface Science, 297: 134-138
139. L. Hong*, Rusli, X.C. Wang, H.Y. Zheng, H. Wang, H.Y. Yu*, Design Guidelines for Si(111) Inclined Nanohole Arrays in Thin-Film Solar Cells, IEEE Transactions on Nanotechnology, 2014, 13(3): 431-436
140. Lei Hong, Rusli, Xincai Wang, Hongyu Zheng, Hao Wang, Xiaoyan Xu, Hongyu Yu*. Light trapping in hybrid nanopyramid and nanohole structure silicon solar cell beyond the Lambertian limit. Journal of Applied Physics, 2014, 116(7): 074310
141. Lei Hong*, Rusli, Xincai Wang, Hongyu Zheng, Jianxiong Wang, Hao Wang, Hongyu Yu. Optical absorption enhancement in a Si nanohole structure with hexagonal unit cell for solar cell application, Nanotechnology, 2014, 25(41): 415303
142. Lei Hong, Rusli*, Xincai Wang, Hongyu Zheng, Hao Wang, Hongyu Yu. Simulated optical absorption enhancement in random silicon nanohole structure for solar cell application. Journal of Applied Physics, 2014, 116(19): 194302
143. Y.B. Zhang, H.L. Zhu*, H. Wu, Y.K. Zhang, Z.G. Zhao, J. Zhong, H. Yang, Q.Q. Liang, D.H. Wang, J.F. Li, C. Jia, J.B. Liu, Y.Y. Zhao, C.L. Li, L.K. Meng, P.Z. Hong, J.J. Li, Q. Xu, J.F. Gao, X.B. He, Y.H. Lu, Y. Zhang, T. Yang, Y. Wang, H.S. Cui, C. Zhao, H.X. Yin, H.C. Zhong, H.Z. Yin, J. Yan, W.W. Wang, D.P. Chen, H.Y. Yu, S. Yang, T.C. Ye, Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance, IEEE Transactions on Electron Devices, 2015, 62(5): 1411-1418
144. Lei. Hong*, Rusli, Xincai Wang, Hongyu Zheng, Jianxiong Wang, Hao Wang, Hongyu Yu. Si/PEDOT:PSS hybrid solar cells incorporated with silver plasmonic nanospheres. Thin Solid Films, 2016, 599: 37-41
145. Yiwen Li, Yulong Chen, Mingxia Qiu, Hongyu Yu, Xinhai Zhang, Xiaowei Sun*, Rui Chen*. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes, Scientific Reports, 2016, 6: 20114
146. Bin Dong, Jie Lin, Ning Wang, Lingli Jiang, Zongdai Liu, Xiaoyan Hu, Kai Cheng, Hongyu Yu*. Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement. Aip Advances, 2016, 6(10): 095021
147. Hui Wang, Ning Wang, Lingli Jiang, Haiyue Zhao, Xinpeng Lin, Hongyu Yu*. Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates. Solid State Electronics, 2017, 137: 52-57
148. Tianli Duan, Jisheng Pan, Ning Wang, Kai Cheng, Hongyu Yu*. Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy. Nanoscale Research Letters, 2017,12: 499
149. Jian Li, Kai He, Zhihui Zhou, Hao Huang, Lei Zhang*, Chaogang Lou, Hongyu Yu*. Influence of feedstock concentration on tetragonality and particle size of hydrothermally synthesized barium titanate powders. Ceramics International. 2017, 43(17): 14813-14817
150. Hui Wang, Ning Wang, Lingli Jiang, Xinpeng Lin, Haiyue Zhao, Hongyu Yu*. A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates. Chinese Physics B, 2017, 26(4):420-424.
151. Bu S T, Huang D M*, Jiao G F, Yu HY, M.F. Li. Low Frequency Noise in Tunneling Field Effect Transistors. Solid-State Electronics, 2017, 137: 95-101
152. Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Tianli Duan, Lingli Jiang, Elina Iervolino, Kai Cheng, Hongyu Yu*. Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature. Aip Advances, 2017, 7(9): 095317
153. Wang, H. and Jiang, L. L. and Wang, N. and Lin, X. P. and Yu, H. Y. The enhancement mode AlGaN/GaN high electron mobility transistor based on charge storage. IEEE,2017, 662-665
154. Huan, Y. W. and Sun, S. M. and Gu, C. J. and Liu, W. J. and Ding, S. J. and Yu, H. Y. and Xia, C. T. and Zhang, D. W. Recent Advances in beta-Ga2O3-Metal Contacts. Nanoscale Research Letters,2018,13(10)
155. Jacobs-Gedrim, Robin B. and Murphy, Michael T. and Yang, Fan and Jain, Nikhil and Shanmugam, Mariyappan and Song, Eui Sang and Kandel, Yudhister and Hesamaddin, Parham and Yu, Hong Yu and Anantram, M. P. and Janes, David B. and Yu, Bin. Reversible phase-change behavior in two-dimensional antimony telluride (Sb2Te3) nanosheets. Applied Physics Letters,2018,112(13)
156. Qi, Yongle and Zhu, Yumeng and Zhang, Jiang and Lin, Xinpeng and Cheng, Kai and Jiang, Lingli and Yu, Hongyu. Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT. Ieee Transactions on Electron Devices,2018,65(5): 1759-1764
157. Santagata, F. and Sun, J. W. and Iervolino, E. and Yu, H. Y. and Wang, F. and Zhang, G. Q. and Sarro, P. M. and Zhang, G. Y. System in package (SiP) technology: fundamentals, design and applications. Microelectronics International,2018,35(4):231-243
158. Sokolovskij, R. and Zhang, J. and Iervolino, E. and Zhao, C. H. and Santagata, F. and Wang, F. and Yu, H. Y. and Sarro, P. M. and Zhang, G. Q. Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor. Sensors and Actuators B-Chemical,2018,274: 636-644
159. Zhang, Jian and Sokolovskij, Robert and Chen, Ganhui and Zhu, Yumeng and Qi, Yongle and Lin, Xinpeng and Li, Wenmao and Zhang, Guo Qi and Jiang, Yu-Long and Yu, Hongyu. Impact of high temperature H-2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection. Sensors and Actuators B-Chemical,2019,280: 138-143

Join as a Editor